Dr.Agasiev Arif Araz oglu


Head research scientist
Semiconductor Physics Division
Institute for Physical Problems
Phone: 439 06 93


  • Was born in September 16th 1941 year in Seidli village, Khudat region
  • Got his secondary education at school district in 1959 year.


  • 1965-1968: Physics Faculty, BSU, student
  • 1973: Ph.D.: Semiconductors and dielectrics Physics, thesis “Preparation and Electrophysical Properties of Sulfoiodide and Antimony Sulfide Films”, Physics Faculty, Baku State University
  • 1995: Dr/Sci, Solid State Physics, thesis “Formation and Electrophysical Properties of Complex Metal-Oxide Films”, Physics Faculty, Baku State University


  • 2005: Head research scientist, Semiconductors Physics, BSU
  • 1992-2005: Head research scientist, Semiconductors Physics Lab., BSU
  • 1987-1992: Chief research scientist, Semiconductors Physics Lab., BSU
  • 1982-1987: Senior research scientist, Semiconductors Physics Lab., BSU
  • 1979-1982: Teacher of Physics, Algiers Institute of Oil and Gas, Algeria
  • 1969-1973: Junior research scientist, Semiconductors Physics Lab., BSU
  • 1968-1969: Engineer-research scientist, Semiconductors Physics Lab., BSU


  • Obtaining of Thin Complex metal-oxide films by the method of magnetron ion sputtering in d.c.


  • XII International Conference on Solid State, Cairo, Egypt, June 2-5, 1989.
  • III All-Union Conference on Physico-Chemical Basis of Ferroelectric and Related Materials Technology. Moscow, October 24-28, 1988.
  • XII European Conference on Studying the Surface, Stockholm, Sweden, September 9-12, 1991.
  • I All-Union Symposium "Electron Diffraction Methods in Studying the Substance Structure". Moscow, 1991.
  • V Republican Scientific Conference. Baku, October 22-24, 1992.
  • Sallite konf. Of the XXX annual meeting of the euor plan High Pres Res Group Phys of Multicom ponent Semicond, 12 October, 1992
  • Türk Fizik Dernegi 18 Fizik Kongresi 25-28 Ekim Çukurova Universiteti-Adana, 1993, p.213
  • Abstaracte of VII Guter Conf-on Solid films and surfaces Gaivan, 1996
  • 35th InRal congress, 14-19 august, Istambul, 1995
  • XXIV Conference of EGMRS, Safaqa, Egypt, 22-26 fevral, 2004
  • TPE-2006 Tzird İnternat. Conferense on Technical and Physical Problems in Power Engineering, 29-31 may, 2006, Ankara, Turkey, p.662-664.


  • Agasiev A.A. Zeinally A.Kh., Mamedov A.M., Efendiev Sh.M. Optical absorption edge of Sb2S3 single crystalline films. Fiz. Tekhn. Poluprov.- 1972. – V.6. -№ 4. P.649-653 (in Russian).
  • Agasiev A.A., Zeinally A.Kh., Silveotrov V.G. SbSJ thin films with the ferroelectric phase transition. Kristal-lografiya. -1973, -V.18. №6. - P.1293-1296 (in Russian).
  • Agasiev A.A., Zeinally A.Kh., Efendiev Sh.M. Direct allowed transitions in SbSJ. Fiz. Tekhn. Poluprov.- 1974. –V.8. №1. – P.197-200 (in Russian).
  • Agasiev A.A., Zeinally A.U., Salmanov V.D. Preparation of sulfoiodide, antimony sulfide and indium selenide crys-talline films. Fiz. Tekhn, Poluprov. 1975. - V.9, №6 (in Russian).
  • Agasiev A.A., Zeinally A.Kh., Tagirov V.I., Salmanov V.B., Karakurkohi K.Yu. Oryetalline films obtained by sub-limation using a laser. Fiz. Tekhn. Poluprov. 1975. -V.12. №6. - P.1170-1172 (in Russian).
  • Agasiev A.A., Berezhnoi A.A., Lebedeva N.N., Mamedov A.M. Cathodo¬lumi¬nescence in ferroelectries with the dif-fused phase transition. Pisma v ZhTF. - 1977. - V.22. P.1176-1178 (in Russian).
  • Agasiev A.A., Salmanov V.B., Tagirov V.I. The laser beam effect on a thin film structure. Fiz. Tekhn. Poluprov. - 1977. -V.11, №12, P.2363 (in Russian),
  • Agasiev A.A., Mamedov A.M., Lebedeva N.N. Luminescence of some oxygen-octahedron ferro¬elec¬trics exposed to an electron beam. Mat. Res. Bull. - 1978. - V.13. – P. 6 4 9.
  • Agasiev A.A., Abdullaev G.B., Iskenderzade Z.A., Jafarova E . A., Tagirov V.İ., Sobeikh N.A., Salmanov V.B., Yaroshevski B.M. Obtaining of structures using a laser. Fiz. Tekhn. Poluprov. 1978. №12. - P.2275 (in Russian)
  • Agasiev A.A., Abdullaev G.B., Iskenderzade Z. A., Jafarova E.A., Tagirov V.I., Sobeikh M.A., Yaroshevski B.M., Salmanov V.M. Formation of semiconductive heterostruetures by laser radiation. Fiz. Tekhn. Poluprov. - 1978. -№12. - P.126 (in Russian).
  • Agasiev A.A., Bezhanova A.I., Orbukh V.I., Silvestrov V.G., Zeinally A.Kh. Integral liht scattering and polarization in SBN c r ys tals. Optika i Spektroskopiya. -1986. - V.60. №4. -P.872-874 (in Russian).
  • Agasiev A.A., Zeinally A.Kh., Alekperov S.J., Guseinov Ya.Yu. Photoelectrical properties of Bi2O3 thin films. Mat. Res. Bull. - 1986. - V.21. - P.765-771.
  • Agasiev A.A., Bagiov V.E., Mamedov A.M., Guseinov Ya.Yu. VUV reflection spectra and electron structure of Bi2O3. Phys. Stat. Sol.(B). -1988. -V.149. P.K191-K195.
  • Agasiev A.A., Efendiev Sh.M., Bagiev V.E., Guseinov Ya.Yu. Nonlinear current-voltage characteristics in Me-Bi2O3-Me structure. Phys. Stat. Sol. (a). - 1989. - V.116, - P.305.
  • Agasiev A.A., Vidadi Yu.A., Bagiev V.E., Guseinov Ya.Yu, Frequency-compen¬sating effect in electric conductivity of Bi2O3 films. Phys. Stat. Sol. (a). 1989. -№1. - P.115.
  • Agasiev A.A., Akhundov Ch.G., Elivazova G.M., Mamedov M.Z. Electrocon¬ductivity of SrTiO3 films with intergrain barriers. Physica B. North-Holland. -1991.-V.173.-P.419-422.
  • Agasiev A.A., Guseinov Ya.Yu. Pecullarities of photoelectrical properties of bismuth oxide films. Phys. Stat. Sol. (a), - 1993. - V.136, - P.473.
  • Agasiev A.A., Orbukh V.I., Mamedov M.Z. Peculiarities of Bi4Ti3O12 films grown by DC magnetron sputtering. J. Phys. III, France. -1994. -V.4. -P.2521-2529.
  • F.Parlaktürka, Ş.Altındalb, A.Tataroğlub, M.Parlakc, A.Ağasiyevb. On the profile of frequency deperdent series resistanol atd surface states in Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures. Microelectronic Engineering 85 (2008) 81-88.
  • Ş.Altındal, F.Parlaktürk, A.Tataroğlu, M.Parlak, S.N.Sarmasov, A.Ağasiyev. The temperature profile and BİOS dapendent series resistarce of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures. Vaccum 82 (2008) 1246-1250.
  • Funda Parlaktürk, Arif Ağasiyev, Adam Tataroğlu, Şemsettin Altındal. Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characneristice of Au/Bi4Ti3O12/SiO2 Structures. G.U.Jornal of Science 20 (4): 97-102 (2007).
  • A.A.Ağasiyev, E.S.Garayev, S.N.Sarmasov. Benavior of puase transition in near inversion zone of Pb1-x¬SnxTe. AMEA-nın Fizika-Riya¬ziy¬yat və texnika Elmləri Bölməsi Fizika İnstitutu. Jurnal Fizika, cild XIII, 5. Bakı-2007. s.15-16.
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