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Dr. Maarif A. Jafarov

Chief research scientist
Semiconductor Physics Division
Phone:(+994)124390693
e-mail:maarif.jafarov@bsu.az

PERSONAL DATA

  • 1960, Lachin, Azerbaijan

EDUCATION AND ACADEMIC DEGREES OBTAINED

  • From 1977 to 1982: student, Faculty of Physics, Baku State University
  • 1982: M.Sc. (with highest honors), Faculty of Physics, Baku State University
  • From 1982 to 1986: postgraduate student, Institute of Photoelectronics, Azerbaijan National Academy of Sciences
  • 1989: Ph.D., “Semiconductor physics”, Institute of Photoelectronics, Azerbaijan National Academy of Sciences, Baku
  • 2007: D.Sc. Electronic processes in single crystals of any A2 B6 type compounds and in films on their basis, chemically deposited from solution

COMPLETE PROFESSIONAL BACKGROUND

  • From 11.2005 to present: Chief research scientist, Institute for Physical Problems, BSU
  • From 01.1994 to 11.2005: Head of the Solid State Electronics Lab., BSU
  • From 09.1982 to 01.1994: Senior research scientist, Institute of Photoelectronics, Azerbaijan National Academy of Sciences, Baku
  • 2001: Nasirov Elshan, “Physical Electronics”, Baku State University
  • 1998: Nasibov Ilgar, “Physical Electronics” Institute of Photoelectronics, Azerbaijan National Academy of Sciences

PRESENT RESEARCH INTERESTS

  • Electronic properties of А2В6 type solid solution films, Heterojunctions of А2В6 type solid solution films for solar cell, negatron phenomenon, nanocrystallites, Electrochemical deposition, Nanotechnology

INTERNATIONAL CONFERENCES, SYMPOSIUMS

  • 2008, Ulyanovsk, Russia; X International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems
  • 2007, Ulyanovsk, Russia; IX International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems
  • 2006, Ulyanovsk, Russia; VIII International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems.
  • 2006, Moscow, Russia; XIX International Science-Technical Conference on Photoeleсtronics and night vision devices.
  • 2006, Strasbourg, Thin film and nanostructured materials for photovoltaics. E-MRS Spring Meeting.
  • 2006, Ankara, Turkey; Third International Conference on Technical and Physical Problems in Power Engineering
  • 2005, Strasbourg, France; E-MRS Spring Meeting, Thin film and nanostructured materials for photovoltaics
  • 2004, Ulyanovsk, Russia; VI International Conference on the optical-nanoeleсtronics, nanotechnology and microsystems.
  • 2004, Moscow, Russia; XVIII International Science-Technical Conference on Photoelectronics and night vision devices.
  • 2004, Taganrog, Russia; The actual problems of the sold-state electronics and microelectronics
  • 2004, Baku, Light in nanosize solide. 1 International Scientific Seminar,
  • 2003, Strasbourg, France; E-MRS Spring Meeting, Thin film and nanostructured materials for photovoltaics
  • 2002, Edinburgh, UK; 26th International Conference on the Physics of Semiconductors
  • 2002, Baku, Azerbaijan; First International Conference on Technical and Physical Problems in Power Engineering
  • 2002, Moscow, Russia; XVII International Science-Technical Conference on the Photoelectronics and night vision devices.
  • 2002, Taganrog, Russia; The actual problems of the sold-state electronics and microelectronics
  • 2000, Santa Barbara, USA; Second International Conference on Inorganic Materials
  • 2000, Moscow, Russia; XVI International Science-Technical Conference on Photoelectronics and night vision devices
  • 1999, Chernovts,Ukraine, Physical problems in material science of semiconductors.
  • 1999, Baku, Azerbaijan, Second International symposium on Mathematical computational applications.
  • 1997 Chernivitsi, Physical problems in material science of semiconductors .
  • 1997, Ulyanovsk, Russia; International Conference on the deep level centers in semiconductors
  • 1994, Taiwan, Seventh International Conference on solid films and surfaces.
  • 1991, Ashkabad, Turkmenistan; The Conference on Photoelectrical phenomena in semiconductors
  • 1990, Kaluga, Russia; V-International Conference on physical processes in the semiconductor heterojunctions

LIST OF SELECTED PUBLICATIONS

Author of 130 scientific publications including 60 scientific articles, 6 patents

  • A.S.Abdinov, M.A.Jafarov, S.M.Mamedova, E.F.Nasirov, Functionalities of the CdSe1-xTex films, deposited from a water solution, in IR region of a spectrum, Applied Physics (Russia) v.3, с.94-97, 2008,
  • A.S.Abdinov, M.A.Jafarov, S.M.Mamedova, Photoelectrical properties of the CdZnS thin films, deposited from solution. Inorganic Materials, 2007, v.43, №.3. p.311-313.
  • M.A.Jafarov, Е.N.Zamanova, H.M.Mamedov, Effect of heat treatment on electrical and electrophysi-cal properties of the CdS. Semiconductor physics and Technology. p.1234-1239, 1999.
  • M.A.Jafarov, About the mechanism conductivity in this films diode structures based on the bases of CdZnS. Journal of Physics, Condensed Matter, p. 984-986, 1999.
  • M.A.Jafarov, H.M.Mamedov, Recombination processes in CdZnS Recombination processes in CdZnS. Journal of Physics, Condensed Matter, p. 984-986, 1999.
  • M.A.Jafarov, Photoelectrical properties of the CdZnS thin films, deposited from solution. Inorganic materials, v.35, N.11, p.1307-1312, 1999.
  • M.A.Jafarov, Spectral memory in CdZnS thin films. Inorganic materials, v.35, N 3, p.300-302, 1999.
  • M.A.Jafarov, Negative photoconduction in the CdZnS thin films. Inorganic materials, v.34, N9, p.1034-1036, 1999.
  • E.Zamanova, M.A.Jafarov, IR optical filter based on the copper doped CdS single crystals. Instrument and experimental techniques, v.38, N 1, p.84-85, 1995.
  • E.Zamanova, M.A.Jafarov, Effect of photomemory in high-resistance CdS:Cu single crystals. Physics and techniques of semiconductors, (Russia) v.29, N8, p.1411-1413, 1995.
  • M.A.Jafarov, Effect of switching in single crystals (In2Te3) и (FeTe). Inorganic materials, v.32, N1, p.34-35, 1996.
  • A.S.Abdinov, M.A.Jafarov, R.M.Rzayev, The effect of doping by Dy on photoelectrical properties of GaSe. Inorganic materials, v.35, N4, p.410-412, 1999.
  • A.S.Abdinov, M.A.Jafarov, R.M.Rzayev, Intrinsic defects and Dy impurities in GaSe. Inorganic materials, v.34, N3, p.271-273, 1996.
  • A.S.Abdinov, M.A.Jafarov, H.M.Mamedov, E.F.Nasirov, Photoconductivity Cd1-xZnxS films, deposited from a water solution. Proc. SPIE, v. 4467, p. 186-194, 2003 and Applied Physics (Russia) v.3, с.94-97, 2004.
  • A.S.Abdinov, M.A.Jafarov, H.M.Mamedov, E.F.Nasirov, Functionalities of the Cd1-xZnxSe films, deposited from a water solution, in IR region of a spectrum. Proc. SPIE, v. 4467, p. 202-205, 2003 and Applied Physics (Russia) v.4, p.84-89, 2004.
  • Jafarov M.A., Photoconductivity Cd1-xZnxS films, deposited from a water solution. Second International Conf. on Technical and Physical Problems in Power Engineering. Tabriz, Iran, p.408-410, 2004.
  • M.A.Jafarov Photoreceivers of JR radiation on the bases of CdSe:Cu films deposited from solutions. Proc. of SPIE, v.4340, p.121-124, 2000 and Applied Physics (Russia) v.6, p.68-73, 2000.
  • A.S.Abdinov, M.A.Jafarov, N.M.Mekhtiev, Photosensitivity of the CdSSe films near the JR region. Proc. of SPIE, v.4340, p.107-111, 2000 and Applied Physics (Russia) v.6, p.63-67, 2000.
  • A.S.Abdinov, M.A.Jafarov, E.F.Nasirov, Photoconductivity of CdZnSe films in IR region deposited from solution. Proc. of SPIE, v.4340, p.112-116. and Applied Physics (Russian) v.6, p.56-62, 2000.
  • Abdinov A.Sh., Jafarov M.A., Nasirov E.F., Mammadova S.A. Solar Cells on the base of Cd1-xZnxS/CdSе1-xТex heterojunctions. Internaтional Conf. on Technical and Physical Problems in Power Enginering. ТЕ-2006, Ankara, Turkey.
  • E.K.Guseynov, M.A.Jafarov, I.Nasibov, Noise characteristic of CdZnS films. Turkish journal of Physics, v.21, N12, p.1255-1261, 1997.
  • E.K.Guseynov, M.A.Jafarov, I.Nasibov, Characteristics of CdS:Cu photosensitive films. Turkish journal of Physics, v.21, N2, p.206-211, 1997.
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